A comparative study of self-heating effect of nMOSFETs fabricated on SGOI and SGSOAN substrates
نویسندگان
چکیده
In this work, for the first time, the electrical and thermal characteristics of strained Si/SiGe nanoscale n type metal–oxide–silicon field-effect transistors (MOSFETs) with silicon-on-aluminum nitride (SOAN) substrate are investigated by ISE TCAD. This novel structure is named as SGSOAN nMOSFET. A comparative study of self-heating effect (SHE) of nMOSFETs fabricated on SGOI and SGSOAN are presented in this paper. Numerical study results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for SGOI to work at high temperature. 2010 Elsevier Ltd. All rights reserved.
منابع مشابه
A Comparative Study of the Synthesis and Thermal Stability of Nanostrucrured Al and Al-Mg Powders Fabricated by Mechanical Alloying Technique
Nanostructured Al and Al-Mg (Mg 30 wt. %) powders with the mean crystallite sizes of 42 and 11 nm were prepared through the solid state ball milling technique. The milling process was performed for various times up to 12 h in argon atmosphere and the synthesized powders were in detail characterized by different techniques. The effect of milling time and Mg addition on the size, morphology, chem...
متن کاملSiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication
In this work, we have developed two different fabrication processes for relaxed Si1xGex-on-insulator (SGOI) substrates: (1) SGOI fabrication by etch-back approach, and (2) by “smart-cut” approach utilizing hydrogen implantation. Etch-back approach produces SGOI substrate with less defects in SiGe film, but the SiGe film uniformity is inferior. “Smart-cut” approach has better control on the SiGe...
متن کاملSelf-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)
We present the design and simulation of a single-walled carbon nanotube(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, theself-heating effect modeling of the CNT MOSFET structure is performed and comparedwith conventional MOSFET structure having same channel length. The numericalresults are presented to show the self-heating effect on the I...
متن کاملSiGe-On-Insulator (SGOI): Two Structures for CMOS Application
Two SiGe-on-insulator (SGOI) structures for CMOS application are presented: surface-channel strained-Si on SGOI (SSOI) and dual-channel SGOI structures. Comparisons between two structures are made from both device performance and CMOS process point of view. We have demonstrated both structures on SGOI, and have fabricated n-MOSFET’s and pMOSFET’s on those two structures respectively. Device cha...
متن کاملThe Impact of Self-Heating and SiGe Strain Relaxed Buffer Thickness on the Analog Performance of Strained Si nMOSFETs
This paper is made available online in accordance with publisher policies. Please scroll down to view the document itself. Please refer to the repository record for this item and our policy information available from the repository home page for further information. To see the final version of this paper please visit the publisher's website. Access to the published version may require a subscri...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2010